A 2.4 GHz-Band 250 W, 60% Feedback-Type GaN-HFET Oscillator Using Imbalanced Coupling Resonator for Use in the Microwave Oven
نویسندگان
چکیده
منابع مشابه
A Push-Push Oscillator Array Using Resonator Type Coupling Circuits
A coupled oscillator array using push-push oscillators and resonator type coupling circuits is presented. In the proposed oscillator array, the coupling circuit operates at the fundamental frequency and the output signal is the 2nd harmonics. The adjacent oscillators are connected via the coupling circuits. The coupling circuit is used to synchronize the oscillators and control the phase differ...
متن کاملthe use of appropriate madm model for ranking the vendors of mci equipments using fuzzy approach
abstract nowadays, the science of decision making has been paid to more attention due to the complexity of the problems of suppliers selection. as known, one of the efficient tools in economic and human resources development is the extension of communication networks in developing countries. so, the proper selection of suppliers of tc equipments is of concern very much. in this study, a ...
15 صفحه اولA dual-mode microwave resonator for double electron-electron spin resonance spectroscopy at W-band microwave frequencies.
We present a dual-mode resonator operating at/near 94 GHz (W-band) microwave frequencies and supporting two microwave modes with the same field polarization at the sample position. Numerical analysis shows that the frequencies of both modes as well as their frequency separation can be tuned in a broad range up to GHz. The resonator was constructed to perform pulsed ELDOR experiments with a vari...
متن کاملGaN HFET digital circuit technology
We report on a demonstration of GaN digital circuits implemented in a first generation GaN digital technology, which has yielded circuits of considerable complexity. We have implemented simple logic blocks, comparators, ring-oscillators and frequency dividers. We have yielded a 31-stage ring-oscillator using 217 transistors [1]. As a result of unique material characteristics GaN digital control...
متن کاملAlGaN/GaN HFET Design for Switching Applications
GALLIUM NITRIDE based heterojunction field-effect transistors (HFETs) show great promise for high-frequency, high-power, and high-temperature applications. Many researchers have fabricated AlGaN/GaN HFETs with very impressive results, including a device with a current handling capability of 1.25 A/mm on SiC substrates[2]. Assuming a sheet charge density of 1.4×1013 cm−2, and a saturation veloci...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Sciences
سال: 2019
ISSN: 2076-3417
DOI: 10.3390/app9142887